A Novel Trench-Based Triple Gate Transistor With Enhanced Driving Capability

نویسندگان

چکیده

This letter addresses the design, implementation, and characterization of a novel high-density Triple Gate Transistor in 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected parallel with main planar transistor. Thanks built-in trenches, proposed manufacturing process increases transistor width without impacting its footprint. The voltage/current characteristics MOS structure compared features new Transistor. architecture provides an improved driving capability, on-state drain current twice as high equivalent standard MOS, combined lower threshold voltage, suitable for low-voltage applications. Finally, gate oxide junction reliability validated over operating voltage range.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Transistor Implementation Of Reversible Gate Using Novel 3 Transistor EX-OR Gate

The design of VLSI systems with less power dissipation has become an area of intense research interest. The development for the design of such a low power systems undoubtedly requires the efficient designing methodology. Reversible Logics are one of the alternatives for removing the power dissipation problem in the VLSI systems at logical level implementation. In this regard, at the physical or...

متن کامل

A Novel Design of Quaternary Inverter ‎Gate Based on GNRFET

   This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...

متن کامل

Magnetoelectric Resonant Gate Transistor

Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas (Fe0.85B0.05Si...

متن کامل

A nanoscale transistor based on gate-induced stochastic transitions

A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a variable resistor, or a simple resistive element with I −V characteristics that can switch between ohmic and non-ohmic. By manipulating the gate voltage, stochas...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Electron Device Letters

سال: 2021

ISSN: ['1558-0563', '0741-3106']

DOI: https://doi.org/10.1109/led.2021.3076609